SuperMESH3 is an innovative technology covering the high-voltage breakdown class, in which the 950 V series is an absolute novelty on the market. It combines excellent electrical performances and reliability in a winning combination, differentiating it from any other product or technology available to date. Increased breakdown voltage margin versus the standards offered in today’s market, extremely good RDS(on)*area and improved switching performances, combined with outstanding avalanche ruggedness extend the capabilities of SuperMESH3 950 V MOSFETs to solve the most critical application issues for lighting and SMPS applications.
Features
Higher voltage capability
Improved avalanche ruggedness
Lower on-resistance (up to 30% less compared to previous generation)
Enhanced dynamic performances (lower Qq, Ciss and Crss)
Improved diode reverse recovery characteristics
Fast diode available as additional feature
Benefits
Larger safe-operating area
Higher avalanche energy handling
Lower conduction and switching losses
