CFD-TOPO predicts the transport, chemistry, etch and deposition of semiconductor materials on the microscopic scale. It enables prediction of three-dimensional topological evolution for multiple materials during thermal or plasma enhanced fabrication of electronic devices.
CFD-TOPO can be operated as a stand-alone code, or coupled with CFD-ACE+ reactor scale models for an integrated multi-scale solution. Advanced capabilities of CFD-TOPO include:
Three-dimensional
Multiple materials and complex chemistries
Fast adaptive meshing
Fully integrated with CFD-ACE+
Fully commercialized and supported
Can be customized for a specific reactor or processes, for ease-of-use and accuracy
The salient features of the CFD-TOPO code include the following:
Two and Three Dimensional feature geometries
Level Set method for material interface tracking
Multiple Materials (arbitrary number of solids tracked)
First or Second order accuracy available in space and time
Solution-adapted grid, initialized from and adapted to material interfaces in ESI Group standard DTF format for grid and model setup
Ballistic Species Transport
Arbitrary number of gas-phase species
Direct integration of incident species fluxes at material interfaces - accelerated by using tree structure of adapted mesh
User-specified angular distribution as diffuse, cosn(q), or text table
General Surface Reaction Mechanisms
Arbitrary number of reaction steps, surface adsorbed species
Defined through CFD-GUI - same format as for reactor scale, coupled with property database for easy model definition
Yield of reactions as function of incident angle (sputtering)
Energy dependent rates and yields of reactions
Graphical Output in DTF Format
Level Set functions named by material (0 isosurface is material boundary)
Material deposition (etch) rates
Fractional coverage of surface species
